After many years of research and development, silicon carbide has
emerged as one of the most important wide band gap semiconductors.
The first commercial SiC devices power switching Schottky diodes
and high temperature MESFETs are now on the market. This two-volume
book gives a comprehensive, up-to-date review of silicon carbide
materials properties and devices. With contributions by recognized
leaders in SiC technology and materials and device research, SiC
Materials and Devices is essential reading for technologists,
scientists and engineers who are working on silicon carbide or
other wide band gap materials and devices. The volumes can also be
used as supplementary textbooks for graduate courses on silicon
carbide and wide band gap semiconductor technology.